Aytar, O. Et Al. 2017. A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology. JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS , vol.68, no.6 , 415-424.

Aytar, O., TANGEL, A., & AFACAN, E., (2017). A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology. JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS , vol.68, no.6, 415-424.

Aytar, Oktay, ALİ TANGEL, And ENGİN AFACAN. "A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology," JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS , vol.68, no.6, 415-424, 2017

Aytar, Oktay Et Al. "A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology." JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS , vol.68, no.6, pp.415-424, 2017

Aytar, O. TANGEL, A. And AFACAN, E. (2017) . "A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology." JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS , vol.68, no.6, pp.415-424.

@article{article, author={Oktay Aytar Et Al. }, title={A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology}, journal={JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS}, year=2017, pages={415-424} }