Thermal analysis of bipolar microelectronic devices


AYDEMIR M., ARICI M. , KARABAY H.

HIGH TEMPERATURES-HIGH PRESSURES, vol.45, no.2, pp.155-161, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 2
  • Publication Date: 2016
  • Title of Journal : HIGH TEMPERATURES-HIGH PRESSURES
  • Page Numbers: pp.155-161

Abstract

The effect of Deep Trench Isolation (DTI) length and heat generation rate on the temperature distribution near the heat source region is investigated numerically for trench isolated devices. Computational results show that since trenches restrict to dissipate heat over the lateral sides, large temperature gradients are established in the trench isolated region which may deteriorate the performance of bipolar transistors. Sharp temperature gradients are more pronounced particularly at higher trench lengths and heat generation rates.