Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode

COŞKUN E., Gullu H. H. , Candan I. , Bayrakli O., PARLAK M., Ercelebi C.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.34, pp.138-145, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 34
  • Publication Date: 2015
  • Doi Number: 10.1016/j.mssp.2015.02.043
  • Page Numbers: pp.138-145


In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 eV. The structural analysis was carried out by means of X-ray diffraction. Current-Voltage (I-V) measurements depending on the sample temperature were performed to investigate the device characteristics and the dominant conduction mechanism in an In/p-AGIT/n-Si/Ag structure. The series and shunt resistances were calculated by the help of parasitic resistance analysis as 5.73 and 1.57 x 10(4) Omega cm(2), respectively at room temperature. The ideality factors and barrier heights were evaluated as a function of sample temperature. In the low bias region, the thermionic emission together with the generation-recombination mechanism was investigated as the dominant transport mechanism; however, in the high bias region, space charge limited current was analyzed as the other effective mechanism in the carrier conduction. The built-in potential of the device was also determined by the help of capacitance-voltage measurements. (C) 2015 Elsevier Ltd. All rights reserved.