Analysis of heat conduction in a nanoscale metal oxide semiconductor field effect transistor using lattice Boltzmann method


Zobiri O., Atia A., ARICI M.

ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası:
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1080/15567036.2020.1786194
  • Dergi Adı: ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS

Özet

Thermal transport in the microelectronic devices has been widely investigated to enhance its reliability. Within this context, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) represents the most used technology for electronic devices manufacturing. Due to its size reduction, the macroscopic model for MOSFET device requests some modifications for capturing thermal behavior within it. Hence, a precise mathematical model for phonon heat transport into transistors has become a key task for nano-electronics technology. The present work aims to investigate the ability of a mesoscale mathematical model for the heat conduction in a MOSFET at a Knudsen number of 10. The reported model was based on D(2)Q(8)lattice Boltzmann model coupled with jump temperature boundary condition. The thermal source was supposed to be uniform along the MOSFET channel region. The temperature jump boundary condition was applied and treated by Lattice Boltzmann Method (LBM) in order to reveal the nature of the phonon-wall collisions lengthwise the channel. We have found that the behavior of the proposed model agrees with experimental results in terms of peak temperature rising. Furthermore, the maximum temperature in the interface (Si-SiO2) is around 333 K. In addition, the results show that 30 ps is enough to reach the steady-state condition. The gained results indicate that the LBM joined with jump temperature condition provides accurate results and it can be employed for analyzing heat transfer phenomenon in microelectronic devices.