Electrical properties and leakage current behavior of un-doped and Ti-doped lea zirconate thin films synthesized by sol-gel method

Alkoy E. M., Shiosaki T.

THIN SOLID FILMS, vol.516, no.12, pp.4002-4010, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 516 Issue: 12
  • Publication Date: 2008
  • Doi Number: 10.1016/j.tsf.2007.08.046
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.4002-4010
  • Kocaeli University Affiliated: Yes


Un-doped and Ti-doped (5, 10 and 15 mol%) antiferroelectric and ferroelectric lead zirconate-PbZrO3 (PZ) thin films were prepared by sol-gel spin coating method. All PZ films crystallized in the perovskite phase with full [111] pseudocubic orientation with a uniform microstructure. The paraelectric-ferroelectric phase transition temperature was found to shift to lower values and the electrical properties were found to degrade as a result of decreasing film thickness. The leakage current of the un-doped PZ films were dominated by the space-charge-fimited current, whereas Poole-Frenkel conduction mechanism was found to be dominant at the Ti-doped films at high electric fields. (c) 2007 Elsevier B.V. All rights reserved.