Fabrication and Characterization of Organic Bulk Heterojunction based Displacement and Bend Sensitive Field Effect Transistors

Yasin M., TAUQEER T., San S. E. , Rahman H. U. , Karimov K. S.

12th INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES & TECHNOLOGY (IBCAST), Islamabad, Pakistan, 13 - 17 Ocak 2015, ss.1-5 identifier identifier


In this work, we report the fabrication and characterization of organic bulk heterojunction based displacement and bend sensitive field effect transistors (FETs). Transistors were fabricated in MESFET configuration with top gate and bottom drain-source electrodes using the blend of poly (3-hexylthiophene) (P3HT) and [6, 6]-phenyl C61-butyric acid methylester (PCBM) as active layer on glass and flexible PET substrates. Active (semiconducting) layer showed Schottky type contact with Aluminum gate electrode and Ohmic contact with Silver drain-source electrodes. Surface properties of the active layers were analyzed using Atomic Force Microscope (AFM). Current Voltage (I-V) characteristics of the devices were found similar to p-type mode I-V characteristics of a typical low voltage ambipolar organic field effect transistor. The effect of displacement and compressive bending on the drain to source current of the devices was investigated. It was found that the current increases with the increase of displacement and bending. Realization of such low voltage devices will provide potential for the development of low cost large area flexible sensor arrays and other low power microelectronic devices in future.