Preparation Of Co, Mn, Nd Doped SiO2 Thin Films And Investigation The Microstructural Propoerties

Hoscan M., Uluadaoglu E., Kandemirli F., Kabalci I.

7th International Conference of the Balkan-Physical-Union, Alexandroupoli, Yunanistan, 9 - 13 Eylül 2009, cilt.1203, ss.217-218 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1203
  • Basıldığı Şehir: Alexandroupoli
  • Basıldığı Ülke: Yunanistan
  • Sayfa Sayıları: ss.217-218


MxOy(M Co.Mn, Nd)-doped SiO2 thin films were prepared by sol-gel method on glass substrates using Si(OC2H5)(4) (tetraethylorthosilicate,TEOS,) as starting material. Si(OC2H5)(4) was dissolved in ethanol and thus, precursor solution was prepared. Various layers of coatings were obtained at room temperature by sol-gel dip-coating process at a withdrawal speed of 10 cm/min The coated substrates were exposed to heat treatment at 650 degrees C. Structural and optical properties of the films were examined by UV-VIS (Lamda 2S Spectrophotometer), AFM (Atomic Force Microscopy) and SE (Spectroscopic Ellipsometry)