Electrical properties of Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diodes formed by surface polymerization of Single Walled Carbon Nanotubes


Ahmetoglu (Afrailov) M., Kara A., TEKİN N. , BEYAZ S., Kockar H.

THIN SOLID FILMS, cilt.520, ss.2106-2109, 2012 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 520 Konu: 6
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.tsf.2011.08.066
  • Dergi Adı: THIN SOLID FILMS
  • Sayfa Sayısı: ss.2106-2109

Özet

In this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively. (C) 2011 Elsevier B.V. All rights reserved.