In this study, enhancement and stabilization of photoluminescence (PL) by porous silicon (PS) were investigated. The PS samples were metallized in solutions containing 3 mM NaNO3 metal salt using immersing plating method. The surface bond configuration of PS was monitored by Fourier Transmission Infrared Spectroscopy (FTIR) and it was found that the PS surface was oxidized after the metallization. The PL intensity increased after certain critical immersion times and PL spectrum shifted towards the high energy region after the metallization. PL intensity of metalized PS samples was more stable than as-anodized PS sample. The experimental results suggested the possibility that oxygen and/or metal passivation (i.e. Na) of PS surface could be the most suitable way for to obtain efficient and stabilized PL.