A novel field effect transistor with dielectric polymer gel

Kosemen A., San S. E. , Okutan M., Dogruyol Z., Demir A., Yerli Y., ...Daha Fazla

MICROELECTRONIC ENGINEERING, cilt.88, ss.17-20, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 88 Konu: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.mee.2010.08.004
  • Sayfa Sayıları: ss.17-20


A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm(2)/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 10(3) on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 mu F, which is sandwiched between glass substrates on which source and drain electrodes were constructed. (C) 2010 Elsevier B.V. All rights reserved.