Tight binding modelling of electronic band structure in conventional InGaN/GaN and dilute GaAsN/GaAs nitride heterostructures

Gurel H. H., Akinci O., Ünlü H.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Türkiye, 30 Temmuz - 04 Ağustos 2006, cilt.4, ss.316-317 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 4
  • Doi Numarası: 10.1002/pssc.200673273
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.316-317
  • Kocaeli Üniversitesi Adresli: Hayır

Özet

We utilize a semi-empirical sp(3)s* tight binding model to investigate the strain and composition effects on electronic structure of conventional InGaN/GaN and dilute GaAsN/GaAs cubic nitride heterostructures. The model includes the second nearest neighbor (2NN) atomic interactions, spin-orbit splitting and nonlinear composition variation of atomic energies and bond lengths of ternaries. Results show that band gaps of conventional InGaN increase with composition for 0 < x < 1. However, the F band gap of dilute GaAsN decreases with composition for x < 0.25 and then starts to increase for 0.26 < x < 1. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.