Tight binding modelling of electronic band structure in conventional InGaN/GaN and dilute GaAsN/GaAs nitride heterostructures


Gurel H. H. , Akinci O., Ünlü H.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Turkey, 30 July - 04 August 2006, vol.4, pp.316-317 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 4
  • Doi Number: 10.1002/pssc.200673273
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.316-317

Abstract

We utilize a semi-empirical sp(3)s* tight binding model to investigate the strain and composition effects on electronic structure of conventional InGaN/GaN and dilute GaAsN/GaAs cubic nitride heterostructures. The model includes the second nearest neighbor (2NN) atomic interactions, spin-orbit splitting and nonlinear composition variation of atomic energies and bond lengths of ternaries. Results show that band gaps of conventional InGaN increase with composition for 0 < x < 1. However, the F band gap of dilute GaAsN decreases with composition for x < 0.25 and then starts to increase for 0.26 < x < 1. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.