The photoluminescence quenching of porous silicon

KAYAHAN E., Esmer K., Basaran E.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.323-324 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733167
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.323-324
  • Kocaeli Üniversitesi Adresli: Evet

Özet

In this study, time-depended photoluminescence (PL) quenching of porous silicon (PS) produced in different solutions by electro-chemical method under UV light was investigated. A two-time-constant exponential function characterizing the quenching of PL intensity was developed and found to be in good agreement with experimental results. Spectra were performed in millisecond intervals since the intensity and wavelength of maximum peak of the PL spectra were affected by excitation light of PL. It was observed that spectroscopic results of UV and FTIR were coherent and especially Si-O-Si bonds, Si-H-x stretch and deformation bonds in the PL quenching played a crucial role.