The development of p-type semiconductor, is one of the key technologies for p-n junction-based devices, such as diodes, transistors and li.-ht-emitting diodes. Copper oxide and copper aluminium oxide (CuAlO2) coatings are known to show p-type conductivity and, as a consequence, these materials are attracting increasing attention. In this study, therefore, various copper oxide and CuAlO2 films were deposited by pulsed magnetron sputtering from loosely packed powder targets, formed from either Cu2O powder alone, or blends of Cu2O and Al2O3 powders, in a rig specifically designed for the purpose. The coatings were deposited at varying partial pressures of oxygen and then annealed at atmospheric pressure. The optical, electrical and structural properties were determined using a range of techniques including spectrophotometry, four-point probe, scanning electron microscopy and X-ray diffraction.