© 2021 Elsevier LtdMetal oxide semiconductor field effect transistor (MOSFET) is a major element of electronic device circuits due to its ability to control the electrical signal. On the other hand, the size of this device became smaller, reached nanoscale. Several macroscopic theoretical studies have been documented on the importance of the thermal behavior in these nano-transistors. This paper provides a developed approach to study the nano-heat conduction coupled with Robin boundary condition and temperature jump boundary condition in MOSFET and Silicon on Insulator (SOI) MOSFET using the mesoscopic Boltzmann transport equation. The results indicated that there was a positive relationship between the increasing of inverse thermal resistance (Rth−1) and the reducing temperature in the source/drain for both devices while the maximal temperature at the interface semiconductor-wall decreases slightly for Rth−1=1010 W/m²∙K at t= 30 ps reaching 331.7 K for MOSFET and 338.5 K for SOI-MOSFET. The effect of heat generated in the active channel is more profound than the effect of Robin condition for Rth−1=107, 108, and 109 W/m²∙K at t = 10 ps. The most obvious findings to emerge from this study is that Robin boundary condition has a slight impact on heat along the channel region at a short time. In addition, this study identified the effect of layer oxide, which stores the heat between the source and the drain.