Porous silicon (PS) has been an attractive material for enhancing the optical properties of silicon. Its large surface area for sensor applications and compatibility with silicon-based technologies has been the driving force for this technology development. In this study, benzene vapor detection properties of porous silicon have been investigated at room temperature. Electrical (DC) and photoluminescence (PL) spectra measurements in a controlled atmosphere (Nitrogen gas and the benzene vapor mix) were performed to test the sensor response towards the benzene vapor. It was find that PS surface very sensitive against to the vapor and electrical/optical properties changes with exposure the vapor. The experimental results suggested that PS surface is candidate a promising material for sensing the benzene vapor.