Ageing effect on photoluminescence of p-type porous silicon

Kayahan E., Oskay T., Haciyev F.

12th International School on Quantum Electronics, Varna, Bulgaria, 23 - 27 September 2002, vol.5226, pp.219-222 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 5226
  • Doi Number: 10.1117/12.519491
  • City: Varna
  • Country: Bulgaria
  • Page Numbers: pp.219-222
  • Kocaeli University Affiliated: Yes


Visible photoluminescence (PL) in anodized porous Si (PS) at room temperature has opened the way to realize different types of quantum electronics devices based on silicon technology. Such devices require a strong PL intensity and a controlled shift of the PL peak on the energy scale. Porous silicon is produced by electrochemical etching of either p- or n-type crystalline silicon. Illumination is one of the most complicated parameters in PS formation, because it changes the properties of microporous as well as macroporous layers. It is necessary to illuminate the wafer during the anodization in order to create the holes required by the chemical reaction to form the PS. In this paper we present the results of the effects of illumination level during fabrication on the PL properties of p-type PS and it time degradation dynamics.