Thermal analysis of bipolar microelectronic devices

AYDEMIR M., ARICI M., KARABAY H.

HIGH TEMPERATURES-HIGH PRESSURES, cilt.45, sa.2, ss.155-161, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 2
  • Basım Tarihi: 2016
  • Dergi Adı: HIGH TEMPERATURES-HIGH PRESSURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.155-161
  • Kocaeli Üniversitesi Adresli: Evet

Özet

The effect of Deep Trench Isolation (DTI) length and heat generation rate on the temperature distribution near the heat source region is investigated numerically for trench isolated devices. Computational results show that since trenches restrict to dissipate heat over the lateral sides, large temperature gradients are established in the trench isolated region which may deteriorate the performance of bipolar transistors. Sharp temperature gradients are more pronounced particularly at higher trench lengths and heat generation rates.