Star-shaped hybrid polymers as insulators for organic field effect transistors

DOĞANCI E., Uner A., Canimkurbey B., Ozdogan R., Tasdelen M. A.

POLYMERS FOR ADVANCED TECHNOLOGIES, cilt.29, sa.12, ss.3020-3026, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Sayı: 12
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1002/pat.4422
  • Dergi Adı: POLYMERS FOR ADVANCED TECHNOLOGIES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3020-3026
  • Anahtar Kelimeler: click chemistry, organic thin film transistor, polyhedral oligomeric silsesquioxane (POSS), star-shaped polymers, TRANSFER RADICAL POLYMERIZATION, CYCLOADDITION CLICK CHEMISTRY, RING-OPENING POLYMERIZATION, TRIBLOCK COPOLYMERS, DIBLOCK COPOLYMERS, COMBINATION, MOBILITY, NANOCOMPOSITES, NANOPARTICLES, NETWORKS
  • Kocaeli Üniversitesi Adresli: Evet

Özet

Synthesis of star-shaped polystyrene (PS) and poly (methyl metachrylate) (PMMA) containing a polyhedral oligomeric silsesquioxane (POSS) core are fabricated by combination of atom transfer radical polymerization (ATRP) and copper (I) catalyzed azide-alkyne cycloaddition (CuAAC) click reaction techniques. The synthetic route proceeds in two steps; firstly, clickable alkyne-end functionalized polymeric arms and a POSS-(N-3)(8) core are prepared independently by arm-first approach using ATRP and nucleophilic substitution reaction of octa-(3-chloropropyl) silsesquioxane POSS-(Cl)(8) with sodium azide. Finally, the CuAAC click reactions between inorganic-organic hybrid core POSS-(N-3)(8) and alkyne functionalized PMMA and PS arms provide the targeted star-shaped polymers. Their chemical structures and molecular characteristics are clearly confirmed by FT-IR, H-1-NMR, and GPC analyses. The obtained polymers are utilized as insulators for organic field effect transistors (OFETs) using perylene as an active n-type organic semiconductor. Compared with linear PMMA and PMMA-POSS, the POSS-(PMMA)(8) exhibited better output and transfer characteristics for the OFET device.